 Semiconductor
Process pw02 |
|
| Thermocouple instrumented
wafers delvelped by ERC use thermocouple at temperature sensor. |
| Thermocouples are
directly implanted into cavities in wafer and secured by high
temperature thermal bond for |
| maximum bonding strength and
minimum heat loss. Depend upon user's application, up to 34
thermocouples |
| can be implanted
on bare, coated, or patterned wafer, or on different substrate
such as GaAs, Ceramic, |
| or Flat panel glass. There
are also various options for wire insulation, connector, |
| and feedthrough other
than thermocouple type. |
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Vacuum
Chamber Type |
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CVD
System |
Diffusion |
| |
LP CVD |
PE CVD |
| |
PVD |
Sputtering |
| |
RTP |
Other Process |
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| |
Wafer
size : 2" ~ 12" |
| |
Thermocouples:
Temperature range 0กษ~1100กษ intermittent. |
| |
|
0กษ~800กษ
continuous |
| |
Accuracy
: Less than กพ1.1กษ or กพ 0.4% 'K type' |
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กพ0.25% of reading - R type |
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| |
Number
of Sensors available : 1~34 Points |
| TC type : K,
R, etc. |
| TC
Leads : Standard thickness. 0.127mm |
| |
TC
Insulation : Silica sleeve, Quartz micro tubing |
| Feed
thru : For Vacuum Chamber |
| |
TC
connectors : 2 - Pin, D-type sub miniature (up to
37 pins), U-shape terminal |
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